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1.
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R. B. Fiorito, A. G. Shkvarunets, T. Watanabe, V. Yakimenko, and D. Snyder
Show Abstract
We have observed the interference of optical diffraction radiation (ODR) and optical transition radiation (OTR) produced by the interaction of a relativistic electron beam with a micromesh foil and a mirror. The production of forward directed ODR from electrons passing through the holes and wires of the mesh and their separate interactions with backward OTR from the mirror are analyzed with the help of a simulation code. By careful choice of the micromesh properties, mesh-mirror spacing, observation wavelength, and filter band pass, the interference of the ODR produced from the unperturbed electrons passing through the open spaces of the mesh and OTR from the mirror are observable above a broad incoherent background from interaction of the heavily scattered electrons passing through the mesh wires. These interferences (ODTRI) are sensitive to the beam divergence and can be used to directly diagnose this parameter. We compare experimental divergence values obtained using ODTRI, conventional OTRI, for the case when front foil scattering is negligible, and computed values obtained from transport code calculations and multiple screen beam size measurements. We obtain good agreement in all cases.
Phys. Rev. ST Accel. Beams 9, 052802 (2006)
Cited 3 times
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2.
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R. B. Fiorito, D. W. Rule, X. K. Maruyama, K. L. DiNova, S. J. Evertson, M. J. Osborne, D. Snyder, H. Rietdyk, M. A. Piestrup, and A. H. Ho
Show Abstract
We have observed up to 8 orders (n) in the spectra of parametric x-radiation (PXR) in the range 5–40 keV, produced by the interaction of a 90 MeV electron beam with mosaic graphite and single silicon crystals. The measured yields and intensity ratios, I(n≥2)/I(n=1), in graphite are not in agreement with the theory of PXR for mosaic crystals. In comparison, the ratios of intensities in silicon are close to the predictions of PXR theory for perfect crystals. The bandwidths of spectral lines measured in both silicon and graphite are in good agreement with theoretical predictions.
Phys. Rev. Lett. 71, 704 (1993)
Cited 14 times
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3.
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M. A. Piestrup, D. G. Boyers, C. I. Pincus, Qiang Li, G. D. Hallewell, M. J. Moran, D. M. Skopik, R. M. Silzer, X. K. Maruyama, D. D. Snyder, and G. B. Rothbart
Show Abstract
We have observed the spatial distribution of coherent or resonance transition radiation (RTR) in the soft-x-ray region of the spectrum (1–3 keV). Resonance transition radiators were constructed and tested at two accelerators using electron-beam energies ranging from 50 to 228 MeV. These radiators emitted soft x rays in a circularly symmetrical annulus with a half-angle divergence of 2.5–9.0 mrad. The angle of peak emission was found to increase with electron-beam energy, in contrast to the incoherent case, for which the angle of emission varied inversely with electron-beam energy. By careful selection of foil thickness and spacing, one may design radiators whose angle of emission varies over a range of charged-particle energies. A particular RTR mode (r=m=1) was found to give a sharp annular ring that becomes more accentuated as the number of foils is increased. The RTR effect has application in particle detection, beam diagnostics, x-ray source brightness enhancement, and x-ray free-electron-laser emission.
Phys. Rev. A 45, 1183 (1992)
Cited 5 times
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4.
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C. E. Bleil, D. D. Snyder, and Y. T. Sihvonen
Show Abstract
The dependence of induced conductivity in CdS crystals on the rate of arrival and the energy of impinging electrons is reported. These results lead to a qualitative picture of the conduction, excitation, and recombination phenomena in CdS which is satisfied by the simple model of a sulfur vacancy, and an analytical expression which involves the mobility of carriers, their effective masses, the number of ground states in the forbidden gap (for pure but not perfect crystals) and their positions as a function of temperature. The red and green luminescence observed under irradiation by electrons is qualitatively explained. The equation for the induced conductivity is derived from the expression for two-carrier conductivity and the definitions of the steady-state Fermi levels for holes and electrons. An empirical fit to the observed data yields σ=eμnNcexp(kTαI-Efn0) / kT for I<Is and σ=e(μn+μp)Nvexp[kTβ(I-Is)-Efp0] / kT for I>Is. The data reported herein were obtained by using monoenergetic bombarding electrons in the range of 30 to 60 kev. An interesting field effect is reported but no clear interpretation is available to the authors. Corroborating data employing ultraviolet irradiation are described.
Phys. Rev. 111, 1522 (1958)
Cited 4 times
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5.
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D. D. Snyder and D. J. Montgomery
No abstract available.
Phys. Rev. 109, 222 (1958)
Cited 3 times
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