Phys. Rev. ST Accel. Beams 5, 062001 (2002) [16 pages]Development of high power X-band semiconductor microwave switch for pulse compression systems of future linear colliders
We describe concepts for high power semiconductor rf switches, designed to handle signals at X-band with power level near 100 MW. We describe an abstract design methodology and derive a general scaling law for these switches. We also present a design and experimental work of a switch operating at the TE01 mode in overmoded circular waveguides. The switch is composed of an array of tee junction elements that have a p-i-n diode array window in the third arm. This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI. © 2002 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevSTAB.5.062001
DOI:
10.1103/PhysRevSTAB.5.062001
PACS:
84.40.-x
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