Phys. Rev. ST Accel. Beams 5, 062001 (2002) [16 pages]Development of high power X-band semiconductor microwave switch for pulse compression systems of future linear colliders
Fumihiko Tamura and Sami G. Tantawi Received 17 January 2002; published 28 June 2002 We describe concepts for high power semiconductor rf switches, designed to handle signals at X-band with power level near 100 MW. We describe an abstract design methodology and derive a general scaling law for these switches. We also present a design and experimental work of a switch operating at the TE01 mode in overmoded circular waveguides. The switch is composed of an array of tee junction elements that have a p-i-n diode array window in the third arm. ©2002 The American Physical Society
URL: http://link.aps.org/doi/10.1103/PhysRevSTAB.5.062001 [ Abstract | Previous article | Next article | Issue 6 ] |
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