Efficient temporal shaping of electron distributions for high-brightness photoemission electron guns

To achieve the lowest emittance electron bunches from photoemission electron guns, it is essential to limit the uncorrelated emittance growth due to space charge forces acting on the bunch in the vicinity of the photocathode through appropriate temporal shaping of the optical pulses illuminating the photocathode. We present measurements of the temporal profile of electron bunches from a bulk crystal GaAs photocathode illuminated with 520 nm wavelength pulses from a frequency-doubled Yb-fiber laser. A transverse deflecting rf cavity was used to make these measurements. The measured laser pulse temporal profile and the corresponding electron beam temporal profile have about 30 ps FWHM duration, with rise and fall times of a few ps. GaAs illuminated by 520 nm optical pulses is a prompt emitter within our measurement uncertainty of ∼1  ps rms. Combined with the low thermal emittance of negative electron affinity photocathodes, GaAs is a very suitable photocathode for high-brightness photoinjectors. We also report measurements of the photoemission response time for GaAsP, which show a strong dependence on the quantum efficiency of the photocathode.